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US 10,096,635 B2Granted
Semiconductor structure and manufacturing method thereof
AssigneeXintec Inc.
InventorsWei-Ming Chien, Po-Han Lee, Tsang-Yu Liu, Yen-Shih Ho
Life of this patent
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Abstract
A semiconductor structure includes a chip, a light transmissive plate, a spacer, and a light-shielding layer. The chip has an image sensor, a first surface and a second surface opposite to the first surface. The image sensor is located on the first surface. The light transmissive plate is disposed on the first surface and covers the image sensor. The spacer is between the light transmissive plate and the first surface, and surrounds the image sensor. The light-shielding layer is located on the first surface between the spacer and the image sensor.
Claims16
A semiconductor structure, comprising:
- a chip having an image sensor, a first surface, a second surface opposite to the first surface, two through holes extending from the first surface to the second surface, and a conductive pad exposed through one of the two through holes, wherein the image sensor is located on the first surface;
- a light transmissive plate disposed on the first surface of the chip and covering the image sensor;
- a spacer between the light transmissive plate and the first surface of the chip, and surrounding the image sensor;
- a reflective layer located on the second surface of the chip, wherein the reflective layer continuously extends from a position of the second surface adjacent to one of the two through holes to another position of the second surface adjacent to other one of the two through holes, and an orthogonal projection of the image sensor on the second surface overlaps the reflective layer, and an orthogonal projection of the reflective layer on the first surface of the chip is surrounded by the spacer, and the reflective layer is free from direct and indirect coverage by the spacer;
- and
- an isolation layer located on wall surfaces of the two through holes and covering the reflective layer and the second surface.
3 more elements
A semiconductor structure, comprising:
- a chip having an image sensor, a first surface, a second surface opposite to the first surface, and a through hole extending from the first surface to the second surface, wherein the image sensor is located on the first surface;
- a light transmissive plate disposed on the first surface of the chip and covering the image sensor;
- a spacer between the light transmissive plate and the first surface of the chip, and surrounding the image sensor;
- a light-shielding layer located on the second surface of the chip, wherein an orthogonal projection of the image sensor on the second surface overlaps the light-shielding layer, and an orthogonal projection of the light-shielding layer on the first surface of the chip is surrounded by the spacer and the light-shielding layer is free from direct and indirect coverage by the spacer;
- and
- an isolation layer on a wall surface of the through hole and between the second surface and the light-shielding layer.
3 more elements
A manufacturing method of a semiconductor structure, comprising:
- forming a spacer on a light transmissive plate or a first surface of a chip;
- bonding the light transmissive plate to the first surface of the chip, thereby enabling the spacer to surround an image sensor of the chip, wherein the chip has two through holes extending from the first surface to the second surface and a conductive pad exposed through one of the two through holes;
- forming a reflective layer on a second surface of the chip opposite to the first surface, thereby enabling an orthogonal projection of the image sensor on the second surface to overlap the reflective layer, wherein the reflective layer continuously extends from a position of the second surface adjacent to one of the two through holes to another position of the second surface adjacent to other one of the two through holes, an orthogonal projection of the reflective layer on the first surface of the chip is surrounded by the spacer, and the reflective layer is free from direct and indirect coverage by the spacer;
- and
- forming an isolation layer that is on wall surfaces of the two through holes and covers the reflective layer and the second surface.
2 more elements
A manufacturing method of a semiconductor structure, comprising:
- forming a spacer on a light transmissive plate or a first surface of a chip;
- bonding the light transmissive plate to the first surface of the chip, thereby enabling the spacer to surround an image sensor of the chip, wherein the chip has a second surface opposite the first surface and a through hole extending from the first surface to the second surface;
- forming an isolation layer on a wall surface of the through hole and the second surface of the chip;
- and
- forming a light-shielding layer on the isolation layer that is on the second surface, thereby enabling an orthogonal projection of the image sensor on the second surface to overlap the light-shielding layer, wherein the isolation layer is between the second surface and the light-shielding layer, and an orthogonal projection of the light-shielding layer on the first surface of the chip is surrounded by the spacer, and the light-shielding layer is free from direct and indirect coverage by the spacer.
2 more elements
Dependencies are inferred from the claim text.