Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung Sun Oh, Yi Tae Kim, Jung Chak Ahn
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Abstract
An image sensor includes a substrate having a first pixel region and a second pixel region adjacent to the first pixel region, a device isolation layer between the first pixel region and the second pixel region and isolating the first pixel region and the second pixel region from each other, a first transistor disposed in the first pixel region, a second transistor disposed in the second pixel region, and a wiring structure electrically connecting the first transistor and the second transistor. The device isolation layer has a deep trench isolation (DTI) structure which extends from a top surface toward a bottom surface of the substrate.
Claims20
An image sensor, comprising:
- a substrate including a first pixel region and a second pixel region which is adjacent to the first pixel region;
- a device isolation layer between the first pixel region and the second pixel region, and configured to isolate the first pixel region and the second pixel region from each other;
- a first transistor disposed in the first pixel region;
- a second transistor disposed in the second pixel region;
- and
- a wiring structure configured to electrically connect the first transistor and the second transistor,
- wherein the device isolation layer has a deep trench isolation (DTI) structure that extends from a top surface of the substrate toward a bottom surface of the substrate.
An image sensor, comprising:
- a substrate including first through fourth pixel regions;
- a device isolation layer between the first, second, third and fourth pixel regions, and configured to isolate the first through fourth pixel regions from each other;
- a first drive transistor disposed in the first pixel region;
- a second drive transistor disposed in the second pixel region;
- a reset transistor disposed in the third pixel region;
- a select transistor disposed in the fourth pixel region;
- and
- a wiring structure configured to electrically connect the first drive transistor and the second drive transistor.
An image sensor, comprising:
- first through fourth transfer transistors disposed in respective first through fourth pixel regions;
- a first photoelectric conversion device connected to a source node of the first transfer transistor;
- a second photoelectric conversion device connected to a source node of the second transfer transistor;
- a third photoelectric conversion device connected to a source node of the third transfer transistor;
- a fourth photoelectric conversion device connected to a source node of the fourth transfer transistor;
- a first drive transistor disposed in the first pixel region and connected to a drain node of the first transfer transistor, a drain node of the second transfer transistor, a drain node of the third transfer transistor, and a drain node of the fourth transfer transistor;
- a second drive transistor disposed in the second pixel region and connected to the drain node of the first transfer transistor, the drain node of the second transfer transistor, the drain node of the third transfer transistor, and the drain node of the fourth transfer transistor;
- and
- a wiring structure configured to electrically connect a gate electrode of the first drive transistor and a gate electrode of the second drive transistor.
Dependencies are inferred from the claim text.