US 10,096,629 B2Granted

Semiconductor device and method for manufacturing same

AssigneeSharp Kabushiki Kaisha

InventorsTakao Saitoh, Seiji Kaneko, Yutaka Takamaru, Yohsuke Kanzaki

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Abstract

A semiconductor device (1001) includes a thin-film transistor (101) including a gate electrode (3), an oxide semiconductor layer (7), a gate insulating layer (5), a source electrode (9s), and a drain electrode (9d); a metal oxide layer (8) including a conductor region (70c) and formed from an oxide film from which the oxide semiconductor layer (7) is also formed; an interlayer insulating layer (13) covering the thin-film transistor and the metal oxide layer (8); and a transparent conductive layer (15) disposed on the interlayer insulating layer and electrically connected to the drain electrode, wherein the oxide semiconductor layer (7) and the metal oxide layer (8) contain indium, tin, and zinc, and the transparent conductive layer (15) overlaps at least a portion of the conductor region (70c) with the interlayer insulating layer (13) therebetween.

Claims19

Dependent claims

A semiconductor device comprising:

a substrate;
a thin-film transistor supported by the substrate and including a gate electrode, an oxide semiconductor layer, a gate insulating layer positioned between the gate electrode and the oxide semiconductor layer, and a source electrode and a drain electrode that are electrically connected to the oxide semiconductor layer;
a metal oxide layer including a conductor region, and formed from an oxide film from which the oxide semiconductor layer is also formed;
an interlayer insulating layer covering the thin-film transistor and the metal oxide layer;
and
a transparent conductive layer disposed on the interlayer insulating layer and electrically connected to the drain electrode, wherein
the oxide semiconductor layer and the metal oxide layer contain indium, tin, and zinc,
the transparent conductive layer overlaps at least a portion of the conductor region with the interlayer insulating layer therebetween,
the interlayer insulating layer includes
a first insulating film covering the thin-film transistor and the metal oxide layer, and having an opening above the conductor region of the metal oxide layer, and
a second insulating film formed on the first insulating film and within the opening, and being in contact with, within the opening, the conductor region of the metal oxide layer, and
the transparent conductive layer overlaps the at east a portion of the conductor region with the second insulating film therebetween.

9 more elements

A method for manufacturing a semiconductor device including a substrate, a thin-film transistor supported by the substrate, and a capacitive element, the method comprising:

(a) a step of forming, on the substrate, a gate electrode and a gate insulating layer covering the gate electrode;
(b) a step of forming, on the gate insulating layer, an oxide semiconductor film containing indium, tin, and zinc and patterning the oxide semiconductor film to form an active-layer-formation oxide semiconductor layer and an electrode-formation oxide semiconductor layer such that the active-layer-formation oxide semiconductor layer is disposed so as to have at least a portion overlapping the gate electrode with the gate insulating layer therebetween;
(c) a step of forming a source electrode and a drain electrode that are in contact with the active-layer-formation oxide semiconductor layer;
(d) a step of forming a first insulating film so as to cover the source electrode, the drain electrode, and the electrode-formation oxide semiconductor layer, and forming, in the first insulating film, a first opening through which a portion of the drain electrode is exposed, and a second opening through which a portion of the electrode-formation oxide semiconductor layer is exposed;
(e) a step of forming, on the first insulating film and within the first and second openings, a second insulating film having a property of reducing an oxide semiconductor contained in the electrode-formation oxide semiconductor layer, to cause a decrease in a resistance of a portion of the electrode-formation oxide semiconductor layer, the portion being in contact with the second insulating film within the second opening, to form a conductor region while a portion of the electrode-formation oxide semiconductor layer, the portion not being turned into a conductor, remains as a semiconductor region;
(f) a step of removing a portion of the second insulating film, the portion being positioned within the first opening, to form a contact hole that extends through the first and second insulating films and through which the drain electrode is exposed;
and
(g) a step of forming a transparent conductive layer on the second insulating film and within the contact hole such that the transparent conductive layer is in contact with the drain electrode within the contact hole and overlaps at least a portion of the conductor region with the second insulating film therebetween.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/576,313Filed 2 Jun 2016
Priority: JP 2015-1159458 Jun 2015
Published: US 2018/0151595 A131 May 2018
Granted: 9 Oct 2018
Term ends: Not estimatedThe source records don’t support an estimate.

Classification17 codes

H10D 86/0221
Of multiple TFTs: comprising manufacture, treatment or patterning of TFT semiconductor bodies
G02F 1/1343
Constructional arrangements; Manufacturing methods: electrodes
G02F 1/1368
Active matrix addressed cells: in which the switching element is a three-electrode device
G09F 9/30
Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual…