Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
Provided is a novel semiconductor device. A switching element, specifically a transistor having a well potential structure is manufactured by utilizing a structure including at least a composite material in which a first region and a second region are stacked over a base like a superlattice. The thickness of each of the first region and the second region is greater than or equal to 0.5 nm and less than or equal to 5 nm. A band structure can be controlled by adjusting the number of stacks, which enables application to a variety of semiconductor elements.
Claims10
A semiconductor device comprising:
- a semiconductor element including a composite comprising first regions and second regions,
- wherein:
- one of the second regions is in contact with one of the first regions,
- the one of the first regions and the one of the second regions are arranged in a thickness direction of the composite,
- the first regions each include at least In, Ga, and Zn,
- the second regions each include In and Zn,
- the second regions have a lower Ga concentration than the first regions,
- the second regions serve as a well portion of a well potential,
- the second regions have a smaller bandgap than the first regions, and
- the one of the second regions is between the first regions in the thickness direction of the composite.
A semiconductor device comprising:
- a semiconductor element including a composite comprising first regions and second regions
- wherein:
- one of the second regions is in contact with one of the first regions,
- the one of the first regions and the one of the second regions are arranged in a thickness direction of the composite,
- the first regions and the second regions each include at least In, Ga, and Zn,
- the second regions have a lower Ga concentration than the first regions,
- the second regions serve as a well portion of a well potential,
- the second regions have a smaller bandgap than the first regions, and
- the one of the second regions is between the first regions in the thickness direction of the composite.
Dependencies are inferred from the claim text.