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US 10,096,615 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsKi Hong Lee, Seung Ho Pyi, Sung Ik Moon
Life of this patent
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Abstract
A semiconductor device includes a cell structure; n first pad structures formed on one side of the cell structure and each configured to have a step form in which 2n layers form one stage; and n second pad structures formed on the other side of the cell structure each configured to have a step form in which 2n layers form one stage, wherein n is a natural number of 1 or higher, and the first pad structures and the second pad structures have asymmetrical step forms having different heights.
Claims11
A method of manufacturing a semiconductor device, comprising:
- forming a stack structure in which a cell region and slimming regions placed on opposite sides of the cell region are defined;
- performing a primary slimming process of selectively etching the slimming regions of the stack structure to form a cell structure and n first pad structures and n second pad structures placed on opposite sides of the cell structure, wherein the slimming regions are selectively etched so that steps are formed between the first and the second pad structures;
- and
- performing a secondary slimming process of forming a mask pattern through which ends of the first and the second pad structures are exposed over the stack structure and etching 2n layers of the first and the second pad structures using the mask pattern as an etch barrier so that each of the first and the second pad structures has a step form in which 2n layers form one stage,
- wherein the n is a natural number of 1 or higher, and
- wherein the first and the second pad structures are patterned in a step form having a step extended in a direction away from the cell structure, such that steps of each of the first and the second pad structures descend as the first and second pad structures extend away from the cell structure.
3 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a stack structure in which a cell region and slimming regions placed on opposite sides of the cell region are defined;
- performing a primary slimming process of selectively etching the slimming regions of the stack structure to form a cell structure and n first pad structures and n second pad structures placed on opposite sides of the cell structure, wherein the slimming regions are selectively etched so that steps are formed between the first and the second pad structures;
- and
- performing a secondary slimming process of forming a mask pattern through which ends of the first and the second pad structures are exposed over the stack structure and etching 2n layers of the first and the second pad structures using the mask pattern as an etch barrier so that each of the first and the second pad structures has a step form in which 2n layers form one stage,
- wherein the n is a natural number of 1 or higher,
- wherein first pad structures adjacent to each other, from among the first pad structures, have a step of one layer,
- wherein second pad structures adjacent to each other, from among the second pad structures, have a step of one layer, and
- wherein the first pad structure and the second pad structure placed on opposite sides of the cell region have a step of n layers.
5 more elements
A method manufacturing a semiconductor device, comprising:
- forming a stack structure including n first pad structures, n second pad structures and a cell structure located between the n first pad structures and the n second pad structures;
- selectively etching the n first pad structures and the n second pad structures so that a step is formed between neighboring first pad structures and a step is formed between neighboring second pad structures;
- selectively etching the n first pad structures and the n second pad structures so that a step is formed between a first pad structure and a second pad structure facing each other;
- and
- selectively etching the n first pad structures and the n second pad structures so that each of the first and second pad structures has a step form in which 2n layers form one stage and steps descend as the first and second pad structures extend away from the cell structure,
- wherein the n is a natural number of 2 or higher,
- a step of one layer exists between the neighboring first pad structures,
- a step of one layer exists between the neighboring second pad structures, and
- a step of n layers exists between the first pad structure and the second pad structure facing each other.
6 more elements
Dependencies are inferred from the claim text.