Semiconductor device and method for manufacturing same

A semiconductor device, comprising:

• a foundation layer;
• a stacked body provided above the foundation layer, the stacked body including a plurality of electrode layers stacked with an insulator interposed, the plurality of electrode layers having a plurality of terrace portions arranged in a stairstep configuration with a difference in levels;
• a semiconductor body extending through the stacked body in a stacking direction of the stacked body;
• a charge storage portion provided between the semiconductor body and one of the electrode layers;
• an insulating layer provided above the terrace portions;
• a plurality of columnar portions extending in the stacking direction through the insulating layer and through the stacked body under the insulating layer, the columnar portions being of an insulating material different from the insulating layer;
• and
• a plurality of contact portions extending in the stacking direction through the insulating layer and being connected to the terrace portions,
• the contact portions including a first contact portion disposed inside a first terrace portion and a second contact portion disposed inside a second terrace portion,
• the columnar portions including a first columnar portion disposed inside the first terrace portion and a second columnar portion disposed inside the second terrace portion,
• a shortest distance between the first contact portion and the first columnar portion, and a shortest distance between the second contact portion and the second columnar portion being substantially equal to each other.