Modified tungsten silicon

A method of forming a semiconductor structure, the method comprising:

• forming a single amorphous tungsten silicon layer directly on an insulator, wherein the single amorphous tungsten silicon layer comprises tungsten and silicon, and wherein the single amorphous tungsten silicon layer has a substantially amorphous structure;
• converting the single amorphous tungsten silicon layer to a tetragonal phase tungsten silicon layer by performing a laser spike anneal of the single amorphous tungsten silicon layer, wherein the tetragonal phase tungsten silicon layer has a tetragonal crystalline structure, and wherein the converting the single amorphous tungsten silicon layer to the tetragonal phase tungsten silicon layer includes reducing a resistance of the single amorphous tungsten silicon layer;
• and
• after converting the single amorphous tungsten silicon layer to a tetragonal phase tungsten silicon layer, forming a first conductive material and a second conductive material on the tetragonal phase tungsten silicon layer, wherein the tetragonal phase tungsten silicon layer forms an electrical connection between the first conductive material and the second conductive material, and
• wherein the tetragonal phase tungsten silicon layer directly contacts the first conductive material and wherein the tetragonal phase tungsten silicon layer directly contacts the second conductive material.