Semiconductor devices including a dummy gate structure on a fin
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-Jine Park, Kee-Sang Kwon, Do-Hyoung Kim, Bo-Un Yoon, Keun-Hee Bai, Kwang-Yong Yang, Kyoung-Hwan Yeo, Yong-Ho Jeon
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Abstract
Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.
Claims16
A semiconductor device comprising:
- a substrate;
- a fin protruding from the substrate and extending in a first direction;
- a recess in the fin and extending in a second direction that is substantially perpendicular to the first direction;
- a first gate structure crossing over the fin on a first side of the recess;
- a second gate structure crossing over the fin on a second side of the recess;
- a first source/drain region between the first gate structure and the recess;
- and
- a second source/drain region between the second gate structure and the recess,
- wherein the recess includes a portion in which a width increases as a depth of the recess in the fin increases.
A semiconductor device comprising:
- a fin protruding from a substrate and extending in a first direction;
- a recess extending in a second direction different from the first direction in the fin;
- a dummy gate structure overlapping the recess extending in the second direction;
- a spacer on a sidewall of the dummy gate structure on the fin;
- an inner spacer on an inner sidewall of the spacer;
- and
- a source/drain region at opposite sides of the recess,
- wherein a lowermost portion of the recess comprises a first portion,
- wherein the recess further comprises a second portion above the first portion, and
- wherein a width of the second portion in the first direction is smaller than a width of the first portion in the first direction.
Dependencies are inferred from the claim text.