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US 10,096,600 B2Granted
Semiconductor device with metal gate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsDa-Yuan Lee, Kuang-Yuan Hsu
Life of this patent
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Abstract
A semiconductor device including a first gate structure is disposed on the semiconductor substrate. The first gate structure includes a gate dielectric layer, a layer, a first work function metal, a second work function metal, and a fill metal. A second gate structure is also disposed on the semiconductor substrate. The second gate structure includes the gate dielectric layer, a second work function metal, and the fill metal. In an embodiment, the second gate structure also includes an etch stop layer.
Claims20
A semiconductor device, comprising:
- a first gate structure formed on a semiconductor substrate, wherein the first gate structure includes:
- a gate dielectric layer;
- a first layer over the gate dielectric layer, wherein the first layer includes a mid-gap metal;
- a first work function metal layer over the first layer;
- a second work function metal layer over the first work function metal layer;
- and
- a fill metal layer over the second work function metal layer;
- and
- a second gate structure formed on the semiconductor substrate, wherein the second gate structure includes:
- the gate dielectric layer, the second work function metal layer directly on the gate dielectric layer, and the fill metal layer.
7 more elements
A device, comprising:
- a PMOS gate structure including:
- a gate dielectric layer;
- a layer over the gate dielectric layer;
- a first work function layer over the layer;
- and
- a second work function layer over the first work function layer,
- wherein the second work function layer is a different composition than the first work function layer;
- and
- an NMOS gate structure including:
- the gate dielectric layer;
- and
- the second work function layer directly on the gate dielectric layer.
9 more elements
A device, comprising:
- a first gate structure of a first type including:
- a high-k gate dielectric layer;
- a layer on the high-k gate dielectric layer, wherein the layer includes a mid-gap metal;
- and
- a first work function layer interfacing the layer;
- and
- a second gate structure of a second type including:
- the high-k gate dielectric layer;
- and
- a second work function layer interfacing the high-k gate dielectric layer, the second work function layer having a different work function than the first work function layer.
7 more elements
Dependencies are inferred from the claim text.