Antenna diode circuit for manufacturing of semiconductor devices

An apparatus, comprising:

• a memory device comprising at least one transistor formed on an n-well region and an isolated p-well region, wherein said n-well region and said isolated p-well region are formed on a deep n-well region, the memory device operatively coupled to a first signal line;
• a first antenna diode formed on said isolated p-well region, wherein a cathode of said first antenna diode is operatively coupled to said first signal line and an anode of said first antenna diode is operatively coupled to said isolated p-well region;
• and
• a second antenna diode formed on said isolated p-well region, wherein an anode of said second antenna diode is operatively coupled to said isolated p-well, and a cathode of the second antenna diode is operatively coupled to a ground node for discharging accumulated charges on said first signal line.

A method, comprising:

• providing a first common diode operatively coupled to a ground node and to an isolated p-well region that is formed over a deep n-well region that is adjacent to an n-well region in a semiconductor device;
• providing a first antenna diode formed on an said isolated p-well region and operatively coupled to a first signal line of said semiconductor device for discharging accumulated charges on said first signal line;
• and
• providing a second antenna diode formed on said isolated p-well region and operatively coupled to a second signal line of semiconductor device for discharging accumulated charges on said second signal line.