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US 10,096,589 B2Granted
Fin ESD protection diode and fabrication method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWun-Jie Lin, Bo-Ting Chen, Jen-Chou Tseng, Ming-Hsiang Song
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Abstract
A method comprises forming an active region including a first fin and a second fin over a substrate, wherein the first fin and the second fin are separated by an isolation region, depositing an epitaxial growth block layer over the active region, patterning the epitaxial growth block layer to define a first growth area and a second growth area and growing an N+ region in the first growth area and a P+ region in the second growth area.
Claims20
A method comprising:
- forming an active region including a first fin and a second fin, wherein the first fin and the second fin are separated by a shallow trench isolation region;
- depositing an epitaxial growth block layer over the active region;
- patterning the epitaxial growth block layer to define a first growth area for an N+ region and a second growth area for a P+ region;
- removing portions of the active region in the first growth area and the second growth area;
- and
- growing the N+ region and the P+ region through an epitaxial growth process, wherein the N+ region and the P+ region form an electrostatic discharge (ESD) protection diode.
3 more elements
A method comprising:
- forming a first fin and a second fin over a well of a substrate;
- forming an isolation region between the first fin and the second fin;
- depositing an epitaxial growth block layer over the well;
- patterning the epitaxial growth block layer to define a first growth area and a second growth area, wherein a top surface of the epitaxial growth block layer over the well is higher than a top surface of the epitaxial growth block layer over the isolation region;
- and
- growing an N+ region in the first growth area and a P+ region in the second growth area.
3 more elements
A method comprising:
- forming an active region including a first fin and a second fin over a substrate, wherein the first fin and the second fin are separated by an isolation region;
- depositing an epitaxial growth block layer over the active region;
- patterning the epitaxial growth block layer to define a first growth area and a second growth area;
- and
- growing an N+ region in the first growth area and a P+ region in the second growth area.
2 more elements
Dependencies are inferred from the claim text.