Fin-based diode structures with a realigned feature layout
AssigneeGLOBAL FOUNDRIES Inc.
InventorsMickey Yu, Alain Loiseau, Souvick Mitra, Tsung-Che Tsai, You Li, Robert J. Gauthier, Jr.
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Abstract
Diode structures and methods of fabricating diode structures. First and second gate structures are formed with the second gate structure arranged parallel to the first gate structure. First and second fins are formed that extend vertically from a top surface of a substrate. The first and second fins are arranged between the first gate structure and the second gate structure. A contact structure is coupled with the first fin and the second fin. The contact structure is laterally arranged between the first gate structure and the second gate structure.
Claims20
A device structure formed using a substrate, the device structure comprising:
- a first gate structure;
- a second gate structure arranged parallel to the first gate structure;
- a first fin and a second fin each extending vertically from a top surface of the substrate, the first fin and the second fin arranged between and parallel to the first gate structure and the second gate structure;
- and
- a first contact structure coupled with the first fin and the second fin,
- wherein the first contact structure is laterally arranged between the first gate structure and the second gate structure.
A method comprising:
- forming a first fin and a second fin each extending vertically from a substrate;
- depositing a gate material layer over the substrate;
- patterning the gate material layer to form a first gate structure and a second gate structure arranged parallel to the first gate structure;
- and
- after patterning the gate material layer, epitaxially growing a first semiconductor material from the first fin and the second fin,
- wherein the first fin and the second fin are arranged between and parallel to the first gate structure and the second gate structure, and the first semiconductor material is laterally arranged between the first gate structure and the second gate structure.
Dependencies are inferred from the claim text.