Semiconductor device including protective film over a substrate

A semiconductor device comprising:

• a first semiconductor chip including a first semiconductor substrate comprising silicon and having a first surface and a second surface, a first electrode on the first surface of the first semiconductor substrate, and a first inorganic protective film covering at least a part of the first surface of the first semiconductor substrate while exposing at least a part of the first electrode;
• a first bump electrode on the first electrode;
• a second semiconductor chip including a second semiconductor substrate comprising silicon and having a first surface and a second surface, a via through the second semiconductor substrate from the first surface to the second surface, the via being electrically connected to the first bump electrode, a second electrode on the first surface of the second semiconductor substrate and electrically connected to the via, and a second inorganic protective film covering at least a part of the first surface of the second semiconductor substrate while exposing at least a part of the second electrode, the first surface of the first semiconductor substrate facing the first surface of the second semiconductor substrate;
• a first organic protective film between the first semiconductor chip and the second semiconductor chip and directly contacting at least a part of the second inorganic protective film while exposing at least a part of the second electrode;
• a re-wiring layer directly contacting the first organic protective film, the re-wiring layer being electrically connected to the first electrode and the second electrode, the first organic protective film being between a portion of the re-wiring layer and a portion of the second inorganic protective film;
• a second bump electrode on the second surface of the second semiconductor chip and electrically connected to the re-wiring layer through the via;
• a third semiconductor chip including a third semiconductor substrate comprising silicon, a third electrode on a first surface of the third semiconductor substrate and electrically connected to the second bump electrode, a third inorganic protective film covering the first surface of the third semiconductor substrate while exposing at least a part of the third electrode, the first surface of the third semiconductor substrate facing the second surface of the second semiconductor substrate;
• and
• a resin layer including a first resin portion and a second resin portion, the first resin portion between the first semiconductor chip and the second semiconductor chip, the first resin portion being in direct contact with the first inorganic protective film, the second resin portion between the second semiconductor chip and the third semiconductor chip, the second resin portion being in direct contact with the third inorganic protective film and not in direct contact with the second inorganic protective film.