Power semiconductor module and electric power steering apparatus using the same

A power semiconductor module that comprises plural arrangements of power semiconductor elements comprising a power semiconductor bare chip which one electrode portion thereof is connected to a metal plate which at least one external connecting terminal is formed and other external connecting terminals which are electrically connected to other electrode portions of said power semiconductor bare chip, and that is formed by being contained in a same package, comprises:

• wherein said plural power semiconductor elements are basically same outline,
• electrodes of said bare chip of said plural power semiconductor elements are mutually connected between said plural power semiconductor elements with a metal connector or a wiring,
• said package is a resin mold package that seals said plural power semiconductor elements with an electrical insulating resin,
• said power semiconductor elements are same as those of a power semiconductor package inside of a single power semiconductor bare chip and have an external connecting terminal which is not electrically connected by said mutual connection in sealing said resin mold package,
• said power semiconductor bare chip is a bare chip of a field effect transistor,
• a drain electrode of said bare chip is joined to a metal plate formed to said one external connecting terminal,
• a gate electrode and a source electrode of said bare chip are provided with a spaced side from said one external connecting terminal against said drain electrode, and
• portions of said gate electrode and said source electrode are mutually connected between said power semiconductor elements with said metal connector or said wiring,
• three power semiconductor elements in said plural power semiconductor elements are arranged in parallel, a source electrode of a bare chip of a first power semiconductor element is electrically connected to a drain electrode of a bare chip of a second power semiconductor element through a metal plate portion of said second power semiconductor element with two metal connectors, said metal plate portion of said second power semiconductor element is electrically connected to a source electrode of a bare chip of a third power semiconductor element with other two metal connectors, and said first, second, and third power semiconductor elements are functionally integrated,
• said plural arrangements of said plural power semiconductor elements are arranged in parallel along respective side surfaces of a virtual triangular column, a heat sink is disposed on an interior of said virtual triangular column, and said external connecting terminals are parallel to a direction of a main axis of said triangular column.

A power semiconductor module that comprises plural arrangements of power semiconductor elements comprising a power semiconductor bare chip which one electrode portion thereof is connected to a metal plate which at least one external connecting terminal is formed and other external connecting terminals which are electrically connected to other electrode portions of said power semiconductor bare chip, and that is formed by being contained in a same package, comprises:

• wherein said plural power semiconductor elements are basically same outline,
• electrodes of said bare chip of said plural power semiconductor elements are mutually connected between said plural power semiconductor elements with a metal connector or a wiring,
• said package is a resin mold package that seals said plural power semiconductor elements with an electrical insulating resin,
• said power semiconductor elements are same as those of a power semiconductor package inside of a single power semiconductor bare chip and have an external connecting terminal which is not electrically connected by said mutual connection in sealing said resin mold package,
• said power semiconductor bare chip is a bare chip of a field effect transistor,
• a drain electrode of said bare chip is joined to a metal plate formed to said one external connecting terminal,
• a gate electrode and a source electrode of said bare chip are provided with a spaced side from said one external connecting terminal against said drain electrode, and
• portions of said gate electrode and said source electrode are mutually connected between said power semiconductor elements with said metal connector or said wiring,
• said one external connecting terminal and said other external connecting terminals are mutually arranged in parallel,
• said plural arrangements of said plural power semiconductor elements are arranged in parallel along respective side surfaces of a virtual triangular column, a heat sink is disposed on an interior of said virtual triangular column, and said external connecting terminals are parallel to a direction of a main axis of said triangular column.