Semiconductor device and method for manufacturing the same
AssigneesAdvanced Semiconductor Engineering, Inc., National Chung Hsing University
InventorsYing-Ta Chiu, Shang-Kun Huang, Yong-Da Chiu, Jenn-Ming Song
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Abstract
The present disclosure relates to a method for manufacturing a semiconductor device. The method includes providing a first electronic component including a first metal contact and a second electronic component including a second metal contact, changing a lattice of the first metal contact, and bonding the first metal contact to the second metal contact under a predetermined pressure and a predetermined temperature.
Claims19
A method for manufacturing a semiconductor device, comprising:
- providing a first electronic component including a first metal contact and a second electronic component including a second metal contact;
- irradiating an electromagnetic radiation on the first metal contact to change a lattice of the first metal contact;
- and
- bonding the first metal contact to the second metal contact under a pressure and a temperature.
A method for manufacturing a semiconductor device, comprising:
- providing a first electronic component including a first metal contact and a second electronic component including a second metal contact, the first metal contact having a first surface and the second metal contact having a second surface;
- irradiating an electromagnetic radiation on the first surface of the first metal contact to distort a lattice at the first surface of the first metal contact;
- and
- bonding the first surface of the first metal contact to the second surface of the second metal contact.
Dependencies are inferred from the claim text.