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US 10,096,556 B2Granted
Semiconductor device
AssigneeToshiba Memory Corporation
InventorTakayuki Kumai
Life of this patent
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Abstract
A semiconductor device includes a substrate and a conductive layer. The substrate has an upper surface that is a substantially rectangular shape having a pair of two sides extending in a first direction and a pair of two sides extending in a second direction. The conductive layer is provided on the substrate and extending along a periphery of the substrate. The conductive layer extends and zigzags toward the first direction.
Claims15
A semiconductor device comprising:
- a substrate having an upper surface that is a substantially rectangular shape having a pair of two sides extending in a first direction and a pair of two sides extending in a second direction;
- a conductive layer provided on the substrate and extending along a periphery of the substrate, wherein the conductive layer extends and zigzags toward the first direction;
- and
- an insulation layer provided in an upper portion of the substrate, wherein the insulation layer extends and zigzags toward the first direction,
- wherein the conductive layer includes a first conductive layer and a second conductive layer, the first conductive layer being provided adjacent to the second conductive layer toward the second direction,
- wherein the first conductive layer includes a first portion and a second portion, the first portion extending in a third direction crossing the first direction and the second direction, the second portion extending in a fourth direction crossing the first direction, the second direction and the third direction.
3 more elements
A semiconductor device comprising:
- a substrate having an upper surface that is a substantially rectangular shape having a pair of two sides extending in a first direction and a pair of two sides extending in a second direction;
- a conductive layer provided on the substrate and extending along a periphery of the substrate, wherein the conductive layer extends and zigzags toward the first direction;
- and
- an insulation layer provided in an upper portion of the substrate, wherein the insulation layer extends and zigzags toward the first direction,
- wherein the substrate includes a silicon crystal, and
- a (100) direction of the silicon crystal or a 010 direction of the silicon crystal cross the first direction.
3 more elements
A semiconductor device comprising:
- a substrate having an upper surface that is a substantially rectangular shape having a pair of two sides extending in a first direction and a pair of two sides extending in a second direction;
- a conductive layer provided on the substrate and extending along a periphery of the substrate, wherein the conductive layer includes a plurality of first portions extending in a third direction and a plurality of second portions extending in a fourth direction;
- and
- an insulation layer provided in an upper portion of the substrate, wherein the insulation layer includes a plurality of third portions extending in the third direction and a plurality of fourth portions extending in the fourth direction,
- wherein the conductive layer includes a curve line portion between at least one of the first portions and one of the second portions.
2 more elements
Dependencies are inferred from the claim text.