Loading patent…
AssigneeRaytheon Company
InventorsJeffrey R. LaRoche, Eduardo M. Chumbes, Kelly P. Ip, Thomas E. Kazior
Estimating the term…
A semiconductor structure having a Group III-N semiconductor layer disposed on a substrate. A multi-layer, electrical contact structure in contact with the Group III-N semiconductor layer includes a gold-free contact layer in contact with the Group III-N semiconductor layer; and a gold-free electrically conductive etch stop layer electrically connected to the gold-free contact layer. An electrically conductive via passes through the substrate to the etch stop layer. The structure includes a plurality of electrode structures, each one providing a corresponding one of a source electrode structure, drain electrode structure and a gate electrode structure. The source electrode structure, drain electrode structure and gate electrode structure include: an electrical contact structure and an electrode contact. The electrode contacts have the same gold-free structure and have co-planar upper surfaces.
A semiconductor structure, comprising:
A semiconductor structure, comprising:
The semiconductor structure recited 8 wherein the gold-free contact layer is in direct contact with the Group III-N semiconductor structure and wherein the gold-free contact layer and the aluminum-based layer have physical annealing properties enabling annealing with the Group III-N semiconductor structure at a temperature less than 660 degrees to form an Ohmic contact with the Group III-N semiconductor structure.
Dependencies are inferred from the claim text.