Method of manufacturing Cu wiring

A Cu wiring manufacturing method for manufacturing a Cu wiring that fills a recess formed in a predetermined pattern on a surface of an interlayer insulating film of a substrate, the method comprising:

• forming a MnOx film which becomes a self-formed barrier film by reaction with the interlayer insulating film at least on a surface of the recess by ALD;
• performing a hydrogen radical process on a surface of the MnOx film to reduce the surface of the MnOx film;
• forming a Ru film by CVD on the surface of the MnOx film which has been reduced by the hydrogen radical process;
• and
• forming a Cu-based film on the Ru film by PVD to fill the Cu-based film in the recess;
• wherein when the Ru film is formed, a film-formation condition of the MnOx film and a condition of the hydrogen radical process are set such that nucleus formation is facilitated,
• wherein the MnOx film is formed by alternately supplying a Mn compound-containing gas and an oxygen-containing gas into a processing chamber accommodating the substrate with a purge process for purging an inside of the processing chamber interposed between the supply of the Mn compound-containing gas and the supply of the oxygen-containing gas, and
• wherein a film thickness of the MnOx film is in the range of 1 nm to 4.5 nm and a temperature of the substrate is set to be lower than a thermal decomposition temperature of a Mn compound in the Mn compound-containing gas.