Metallic interconnects products
OwnerUri Coheninventor
Life of this patent
Estimating the term…
Abstract
One embodiment is a semiconductor device including: at least one patterned dielectric layer having at least one opening therein, said at least one opening having sidewalls and bottom; at least one barrier layer disposed over the sidewalls and bottom; a first metallic layer disposed over the at least one barrier layer; a second metallic layer disposed over the first metallic layer; and a metallic filling layer disposed over the second metallic layer; wherein: the first metallic layer is continuous over the sidewalls and bottom, has a thickness in a range from about 10 Å to no more than 40 Å over a sidewall of the at least one opening; and the second metallic layer, and the metallic filling layer are selected from a group consisting of Cu, Ag, and alloys containing one or more of these metals.
Claims29
A semiconductor device comprising:
- at least one patterned dielectric layer having at least one opening therein, said at least one opening having sidewalls and bottom;
- at least one barrier layer disposed over the sidewalls and bottom of the at least one opening;
- a first metallic layer disposed over the at least one barrier layer;
- a second metallic layer disposed over the first metallic layer;
- and
- a metallic filling layer disposed over the second metallic layer;
- wherein:
- (a) the first metallic layer is selected from a group consisting of Co, Ni, and alloys comprising one or more of these metals, and the first metallic layer has a thickness from about 10 Å to no more than 40 Å over a sidewall (at mid-depth) of the at least one opening;
- and
- (b) the combined thickness of the first and the second metallic layers over a sidewall (at mid-depth) is from about 20 Å to no more than 70 Å or, when the thickness of the first metallic layer over the sidewall (at mid-depth) is larger than 20 Å, from the thickness of the first metallic layer over the sidewall (at mid-depth) to no more than 70 Å.
A semiconductor device comprising:
- at least one patterned dielectric layer having at least one opening therein, said at least one opening having sidewalls and bottom;
- at least one barrier layer disposed over the sidewalls and bottom of the at least one opening;
- a first seed layer disposed over the at least one barrier layer;
- a second seed layer disposed over the first seed layer;
- and
- a metallic filling layer disposed over the second seed layer;
- wherein:
- (a) the first seed layer is selected from a group consisting of Co, Ni, and alloys comprising one or more of these metals, and the first seed layer has a thickness from about 20 Å to no more than 40 Å over a sidewall (at mid-depth) of the at least one opening;
- and
- (b) the combined thickness of the first and the second seed layers over a sidewall (at mid-depth) is from the thickness of the first seed layer over the sidewall (at mid-depth) to no more than 60 Å.
A semiconductor device comprising:
- at least one patterned dielectric layer having at least one opening therein, said at least one opening having sidewalls and bottom;
- at least one barrier layer disposed over the sidewalls of the at least one opening;
- a first seed layer disposed over the at least one barrier layer;
- a second seed layer disposed over the first seed layer;
- and
- a metallic filling layer disposed over the second seed layer;
- wherein:
- (a) the first seed layer is selected from a group consisting of Co, Ni, and alloys comprising one or more of these metals, and the first seed layer has a thickness from about 10 Å to no more than 30 Å over a sidewall (at mid-depth);
- (b) the combined thickness of the first and the second seed layers over a sidewall (at mid-depth) is from about 20 Å to no more than 80 Å or, when the thickness of the first seed layer over the sidewall (at mid-depth) is larger than 20 Å, from the thickness of the first seed layer over the sidewall (at mid-depth) to no more than 80 Å;
- and
- (c) the second seed layer and the metallic filling layer are selected from a group consisting of Cu, Ag, and alloys comprising one or more of these metals.
Dependencies are inferred from the claim text.