Semiconductor device

A semiconductor device, comprising:

• a substrate including an active pattern extending in a first direction;
• a device isolation layer on the substrate, the device isolation layer defining the active pattern;
• a first gate structure on the active pattern and the device isolation layer, the first gate structure extending in a second direction crossing the first direction;
• and
• a gate contact connected to the first gate structure,
• wherein the gate contact vertically overlaps the device isolation layer,
• wherein the gate contact includes a vertical extending portion extending vertically toward the device isolation layer along one sidewall of the first gate structure, and
• wherein a bottom surface of the vertical extending portion is in contact with a top surface of the device isolation layer.

A semiconductor device, comprising:

• a substrate including an active pattern extending in a first direction;
• a device isolation layer on the substrate, the device isolation layer defining the active pattern;
• a gate structure on the active pattern and the device isolation layer, the gate structure extending in a second direction crossing the first direction;
• and
• a gate contact on the device isolation layer and connected to the gate structure,
• wherein the gate contact includes a vertical extending portion extending vertically toward the device isolation layer along one sidewall of the gate structure, and
• wherein the vertical extending portion is between the one sidewall of the gate structure and one sidewall of an upper portion of the gate contact, and
• wherein the one sidewall of the upper portion of the gate contact protrudes with respect to one sidewall of the vertical extending portion in the first direction.