Semiconductor capacitor structure for high voltage sustain

A semiconductor capacitor structure for high voltage sustain, comprising:

• a first metal layer in a first level of the semiconductor capacitor structure, arranged to be a part of a first electrode of the semiconductor capacitor structure, the first metal layer comprising:
• a first portion, formed to have a first pattern;
• and
• a second portion, connected to the first portion,
• wherein the first portion includes a plurality of sections protruding from the second portion;
• a second metal layer in a second level of the semiconductor capacitor structure above the first level, superimposed on top of the first metal layer, and arranged to be a part of a second electrode of the semiconductor capacitor structure;
• a first dielectric layer, formed between the first metal layer and the second metal layer:
• and
• a third metal layer in a third level of the semiconductor capacitor structure above the second level, superimposed on top of the second metal layer, and arranged to be a part of the first electrode of the semiconductor capacitor structure,
• wherein, within the semiconductor capacitor structure:
• the first and third levels do not include a portion of the second electrode, and
• the second level does not include a portion of the first electrode.