Semiconductor device and method of forming dummy pillars between semiconductor die and substrate for maintaining standoff distance

A method of making a semiconductor device, comprising:

• providing a semiconductor die;
• forming a conductive layer over the semiconductor die;
• forming an insulating layer over the conductive layer;
• depositing a conductive material within openings of the insulating layer to form a plurality of conductive pillars over the conductive layer and a plurality of rigid dummy pillars over the semiconductor die electrically isolated from the conductive layer and conductive pillars, wherein a height of the rigid dummy pillars is greater than a height of the conductive pillars;
• disposing a bump material over the conductive pillars;
• providing a substrate;
• disposing the semiconductor die over the substrate after forming the conductive pillars and rigid dummy pillars with the rigid dummy pillars maintaining a fixed standoff distance between the semiconductor die and substrate;
• and
• reflowing the bump material, wherein surface tension retains the bump material within a footprint of the conductive pillars and the fixed standoff distance reduces pressure on the bump material.