Graphene heat dissipating structure

A method, comprising:

• masking a plurality of regions on a surface of a silicon carbide substrate, wherein the silicon carbide surface comprises an oxide layer;
• removing the oxide layer from unmasked regions of the oxide layer on silicon carbide surface to expose the underlaying silicon carbide;
• applying a solution to the exposed silicon carbide, wherein the solution comprising molecules formed from diazonium and graphene;
• heating the substrate causing solvent in the solution to evaporate, wherein a first plurality of the diazonium and graphene molecules in the solution remain bonded to the exposed silicon carbide causing a layer of diazonium and graphene molecules to form on the exposed silicon carbide;
• and
• reapplying the solution, wherein a second plurality of the diazonium and graphene molecules in the solution bond with the first plurality of the diazonium and graphene molecules bonded to the exposed silicon carbide causing the layer of diazonium and graphene molecules to increase in thickness.