Semiconductor device with sensor potential in the active region

A semiconductor device, comprising a semiconductor body region and a surface region, the semiconductor body region including a first semiconductor region comprising charge carriers of a first conductivity type and including a second semiconductor region comprising charge carriers of a second conductivity type;

• the semiconductor device further comprising:
• a first load contact structure included in the surface region and arranged for feeding a load current into the semiconductor body region;
• a first trench extending into the semiconductor body region and comprising a sensor electrode and a first dielectric, the first dielectric electrically insulating the sensor electrode from the second semiconductor region;
• a second trench extending into the semiconductor body region and comprising a first control electrode and a second dielectric, the second dielectric electrically insulating the first control electrode from the second semiconductor region;
• a third trench extending into the semiconductor body region and comprising a second control electrode and a third dielectric, the third dielectric electrically insulating a second control electrode from the second semiconductor region;
• an electrically conductive path electrically connecting the sensor electrode to the first semiconductor region;
• a first semiconductor path, wherein the sensor electrode is electrically coupled to the first load contact structure by means of at least the first semiconductor path;
• wherein
• the semiconductor device comprises a sensor contact structure included in the surface region and arranged for receiving an electrical potential of the sensor electrode;
• the first trench is arranged between the second trench and the third trench;
• and
• the first semiconductor region comprises an electrically floating region of the semiconductor body region.

A semiconductor apparatus having a semiconductor component that comprises a semiconductor body region and a surface region, the semiconductor body region including a first semiconductor region comprising charge carriers of a first conductivity type and including a second semiconductor region comprising charge carriers of a second conductivity type, the semiconductor component further comprising:

• a first load contact structure included in the surface region and arranged for feeding a load current into the semiconductor body region;
• a first trench extending into the semiconductor body region and comprising a sensor electrode and a first dielectric, the first dielectric electrically insulating the sensor electrode from the second semiconductor region;
• an electrically conductive path electrically connecting the sensor electrode to the first semiconductor region;
• a first semiconductor path, wherein the first semiconductor region is electrically coupled to the first load contact structure by means of at least the first semiconductor path;
• at least one second trench extending into the semiconductor body region, the at least one second trench comprising a control electrode and a second dielectric, wherein the control electrode is arranged for controlling the load current in dependence of a control signal, and wherein the second dielectric electrically insulates the control electrode from the semiconductor body region;
• at least one third trench extending into the semiconductor body region, the at least one third trench comprising a field electrode and a third dielectric, wherein the field electrode is electrically connected to the first load contact structure, and wherein the third dielectric electrically insulates the field electrode from the semiconductor body region;
• wherein
• the semiconductor component further comprises a sensor contact structure included in the surface region and arranged for receiving an electrical potential of the sensor electrode;
• the first trench is arranged between the at least one second trench and the at least one third trench;
• and
• the first semiconductor region comprises an electrically floating region of the semiconductor body region.