Method of forming a barrier layer for through via applications
AssigneeApplied Materials, Inc.
InventorsKurtis Leschkies, Steven Verhaverbeke
Life of this patent
Estimating the term…
Abstract
Embodiments of the disclosure generally relate to a method of improving quality of a barrier layer suitable for forming high aspect ratio through substrate vias. In one example, a method for depositing a barrier layer includes depositing a barrier layer in a hole formed in a substrate, exposing the deposited barrier layer to a processing gas at a pressure greater than about 2 bars, and, maintaining a temperature of the substrate between about 150 degrees and about 700 degrees Celsius while in the presence of the processing gas.
Claims18
A method for depositing a barrier layer, the method comprising:
- depositing a barrier layer in a hole formed in a substrate, wherein the hole has an aspect ratio of at least 10:1;
- exposing the deposited barrier layer to a processing gas at a pressure greater than about 2 bars;
- and
- annealing the deposited barrier layer by maintaining a temperature of the substrate between about 150 degrees and about 700 degrees Celsius while in the presence of the processing gas, wherein the annealing replaces oxygen atoms having a first isotope in the deposited barrier layer with oxygen atoms having a second isotope that is higher than the first isotope to densify the deposited barrier layer.
A method of forming a through substrate via, the method comprising:
- depositing a barrier layer in a hole formed in a feature side of a substrate, the feature side opposite a backside of the substrate, wherein the hole comprises an aspect ratio of at least 10:1;
- annealing the deposited barrier layer by:
- exposing the deposited barrier layer to a processing gas at a pressure greater than about 2 bars;
- and
- maintaining a temperature of the substrate between about 150 degrees and about 700 degrees Celsius while in the presence of the processing gas, wherein the annealing replaces oxygen atoms having a first isotope in the deposited barrier layer with oxygen atoms having a second isotope that is higher than the first isotope to densify the deposited barrier layer;
- filling the hole with a conductive material on top of the barrier layer;
- and
- thinning the substrate from the backside to expose the conductive material.
Dependencies are inferred from the claim text.