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US 10,096,514 B2Granted
Seamless trench fill using deposition/etch techniques
AssigneeApplied Materials, Inc.
InventorsJeffrey W. Anthis, David Thompson
Life of this patent
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Abstract
Methods for filing a feature on a substrate surface comprising depositing a conformal nitride film on the substrate surface and at least one feature on the surface, oxidizing a portion of the nitride film to form an asymmetric oxide film on top of the nitride film and etching the oxide film from the nitride film to leave a v-shaped nitride film in the at least one feature.
Claims20
A processing method comprising:
- providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall;
- depositing a conformal nitride film on the substrate surface and the at least one feature;
- oxidizing a portion of the nitride film to form an asymmetric oxide film on top of the nitride film;
- and
- etching the oxide film from the nitride film to leave a v-shaped nitride film in the at least one feature.
2 more elements
A processing method comprising:
- providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall;
- depositing a conformal titanium nitride film on the substrate surface and the at least one feature;
- oxidizing a portion of the titanium nitride film to form an asymmetric titanium oxide film on top of the titanium nitride film;
- and
- etching the titanium oxide film from the titanium nitride film to leave a v-shaped titanium nitride film in the at least one feature.
2 more elements
A processing method comprising:
- (a) providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall;
- (b) depositing a conformal titanium nitride film on the substrate surface and the at least one feature by sequentially exposing the substrate surface to a titanium precursor comprising one or more of tetrakis(dimethylamino) titanium or titanium chloride and a reactant comprising an ammonia plasma;
- (c) oxidizing a portion of the titanium nitride film by exposing the titanium nitride film to an oxidizing agent comprising one or more of ozone, hydrazine or oxygen plasma to form an asymmetric titanium oxide film on top of the titanium nitride film;
- (d) etching the titanium oxide film from the titanium nitride film by exposing the titanium oxide film to a metal halide comprising one or more of niobium chloride, niobium fluoride, tungsten fluoride or tungsten chloride to leave a v-shaped titanium nitride film in the at least one feature;
- and
- (e) repeating (b)-(d) to fill the at least one feature with substantially no seam.
3 more elements
Dependencies are inferred from the claim text.