Gapfill film modification for advanced CMP and recess flow
AssigneeApplied Materials, Inc.
InventorsErica Chen, Ludovic Godet, Srinivas D. Nemani, Ellie Y. Yieh
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Abstract
Implementations described herein relate to methods for forming gap fill materials. After the gap fill material is deposited and before a CMP process is performed on the gap fill material, one or more ion implantation processes are utilized to treat the deposited gap fill material. The one or more ion implantation processes include implanting a first ion species in the gap fill material using a first ion energy, and then implanting a second ion species in the gap fill material using a second ion energy that's lower than the first ion energy. The one or more ion implantation processes minimize CMP dishing and improve recess profile.
Claims6
A method for forming a gap fill material, comprising:
- depositing a gap fill material on a substrate;
- treating the gap fill material, the treating comprising:
- implanting helium ions in the gap fill material using a first ion energy;
- and then
- implanting silicon ions in the gap fill material using a second ion energy, wherein the first ion energy is greater than the second ion energy;
- then
- annealing the gap fill material after implanting the silicon ion species to form an annealed gap fill material;
- and then
- performing a chemical mechanical polishing process on the annealed gap fill material.
Dependencies are inferred from the claim text.