Process chamber for etching low K and other dielectric films
AssigneeApplied Materials, Inc.
InventorsDmitry Lubomirsky, Srinivas Nemani, Ellie Yieh, Sergey G. Belostotskiy
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AssigneeApplied Materials, Inc.
InventorsDmitry Lubomirsky, Srinivas Nemani, Ellie Yieh, Sergey G. Belostotskiy
Estimating the term…
Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.
A method of etching a dielectric film, the method comprising:
A method of etching, the method comprising:
Dependencies are inferred from the claim text.