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US 10,096,485 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeToshiba Memory Corporation
InventorNaomi Fukumaki
Life of this patent
Estimating the term…
Abstract
In one embodiment, a method of manufacturing a semiconductor device includes forming a plug in a first insulator, forming a first film on the first insulator and the plug, and forming an opening in the first film. The method further includes forming a second insulator in the opening to form an air gap in the opening, removing the first film after forming the second insulator, to expose the plug, and forming an interconnect on the exposed plug.
Claims4
A semiconductor device comprising:
- a first insulator;
- a plug provided in the first insulator;
- a second insulator provided on the first insulator, the second insulator including an air gap, a lower face of the second insulator being lower than an upper face of the plug;
- and
- an interconnect provided on the plug, the interconnect including a barrier layer that is in contact with the second insulator and extends along a vertical direction from an upper face of the first insulator to an upper face of the second insulator,
- wherein an upper end of the air gap is lower than an upper face of the interconnect and the upper face of the second insulator, and a lower end of the air gap is higher than a lower face of the interconnect and the upper face of the first insulator.
3 more elements
Dependencies are inferred from the claim text.