Apparatus and method for chemical mechanical polishing process control

A chemical-mechanical polishing (CMP) system comprising:

• a base configured to receive at least one polishing pad;
• a plurality of wafer heads each configured to receive a wafer and to polish the received wafer on the at least one polishing pad, wherein the plurality of wafer heads are further configured to polish received wafers on the at least one polishing pad concurrently, and wherein the plurality of wafer heads are further configured to apply independent polishing pressures while polishing the received wafers on the at least one polishing pad concurrently;
• and
• a controller communicatively coupled to the plurality of wafer heads, wherein the controller is configured to:
• classify surface profiles of the received wafers;
• determine a polishing parameter for each of the plurality of wafer heads based on:
• the classified surface profiles and an interaction between the plurality of wafer heads, whereby a polishing rate associated with one of the plurality of wafer heads depends on pressure applied by the other of the plurality of wafer heads when polishing the received wafers on the at least one polishing pad concurrently;
• and
• control the plurality of wafer heads to perform the polishing of the received wafers on the at least one polishing pad concurrently according to the polishing parameter.