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US 10,096,480 B2Granted
Method and apparatus for dynamic control of the temperature of a wet etch process
AssigneeTokyo Electron Limited
InventorsAntonio Luis Pacheco Rotondaro, Wallace P. Printz
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Abstract
A method for controlling the temperature profile of phosphoric acid process over a wafer surface through the dynamic control of radial dispensing of sulfuric acid at a selected temperature, which includes providing a substrate with a layer formed thereupon; dispensing a first chemical and second chemicals onto the layer while adjusting at least one parameter of the second chemical dispense to vary the etch rate across a region of the substrate.
Claims22
A method for etching a layer on a substrate, comprising:
- providing the substrate with the layer formed thereupon;
- dispensing a first chemical comprising phosphoric acid (H3PO4) onto the layer;
- separately dispensing a second chemical comprising sulfuric acid (H2SO4) onto the layer while dispensing the first chemical to etch the layer with the first and second chemicals;
- adjusting at least one parameter of the first chemical dispense, during the first chemical dispensing, and adjusting at least one parameter of the second chemical dispense, during the second chemical dispensing, to vary an etch rate across a region of the substrate as the layer is being etched;
- and
- dispensing water onto the layer while dispensing the first and second chemicals, and adjusting a water flowrate or a water temperature, or both, during the water dispensing effective to achieve a desired etch selectivity.
3 more elements
A method for etching a layer on a substrate, comprising:
- determining a thickness profile of the layer on the substrate;
- determining an etch rate profile to compensate for nonuniformity in the thickness profile;
- dispensing a first chemical onto the layer;
- separately dispensing a second chemical onto the layer while dispensing the first chemical to etch the layer with the first and second chemicals;
- and
- as the layer is being etched, adjusting at least one parameter of the second chemical dispense, during the second chemical dispensing, to produce a first etch rate on a first region of the substrate that differs from a second etch rate at a second region of the substrate according to the etch rate profile.
3 more elements
Dependencies are inferred from the claim text.