System and method for depositing a homogenous interface for PECVD metal-doped carbon hardmasks
AssigneeLam Research Corporation
InventorFayaz Shaikh
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Abstract
A method for depositing a hardmask layer on a substrate includes nitridating a first layer of the substrate. The first layer is selected from a group consisting of silicon dioxide and silicon nitride. An amorphous carbon layer is deposited on the nitridated first layer via plasma-enhanced chemical vapor deposition (PECVD). A monolayer is deposited on the amorphous carbon layer using gas mixture including a metal precursor gas with a reducing agent and without plasma. A bulk metal-doped carbon hardmask layer is deposited on the monolayer.
Claims17
A method for depositing a hardmask layer on a substrate, comprising:
- nitridating a first layer of the substrate, wherein the first layer is selected from a group consisting of silicon dioxide and silicon nitride;
- depositing an amorphous carbon layer on the nitridated first layer via plasma-enhanced chemical vapor deposition (PECVD);
- depositing a monolayer on the amorphous carbon layer using gas mixture including a metal precursor gas with a reducing agent and without plasma;
- and
- depositing a bulk metal-doped carbon hardmask layer on the monolayer.
A method for depositing a hardmask layer on a substrate, comprising:
- nitridating a first layer of the substrate,
- wherein the first layer is selected from a group consisting of silicon dioxide and silicon nitride, and
- wherein the nitridating includes heating the substrate to a predetermined temperature in a temperature range from 350° C. to 550° C., and supplying an inert gas mixture include molecular nitrogen;
- depositing an amorphous carbon layer on the nitridated first layer via plasma-enhanced chemical vapor deposition (PECVD);
- depositing a monolayer on the amorphous carbon layer having a thickness in a range from 2 nm to 10 nm using gas mixture including a metal precursor gas with a halide-based reducing agent and without plasma;
- and
- depositing a bulk metal-doped carbon hardmask layer on the monolayer.
Dependencies are inferred from the claim text.