Partial net shape and partial near net shape silicon carbide chemical vapor deposition

A method for fabricating a structure of a plasma processing chamber, the method comprising:

• providing a sacrificial substrate having a first shape;
• machining the substrate into a second shape, wherein at least a portion of the second shape is complementary or reciprocal to a desired final shape of the structure, wherein the structure is a component of the plasma processing chamber;
• subsequent to machining the substrate into the second shape, depositing a layer of material directly on the substrate such that the layer of material at least partially surrounds the substrate;
• machining first selected portions of the layer of material deposited on the substrate to expose the substrate at least partially surrounded by the layer of material;
• removing remaining portions of the exposed substrate;
• and
• machining second selected portions of the layer of material such that the layer of material is shaped into the structure without machining third selected portions of the layer of material, wherein the structure has an annular ring shape including an annular inner surface and an annular outer surface opposite the annular inner surface, wherein the third selected portions of the layer of material correspond to surfaces of the structure that are exposed to plasma during plasma processing that is performed in the plasma processing chamber subsequent to fabricating the structure, and wherein the third selected portions include the annular inner surface,
• wherein the structure corresponds to one of a plasma confinement shroud and an edge ring.