Method of producing a silicon carbide single-crystal substrate by epitaxial growth of a SiC epitaxial film on a SiC substrate

A method of growing a silicon carbide epitaxial film, comprising, in the order recited:

• introducing into a reaction chamber, a source gas including a gas containing silicon, a gas containing carbon, and a gas containing chlorine;
• growing a single-crystal silicon carbide epitaxial film on a silicon carbide substrate inside the reaction chamber by CVD;
• and
• suspending supply of the gas containing silicon and the gas containing carbon into the reaction chamber while maintaining a furnace temperature as is during performing processing in a gas atmosphere containing only hydrogen, or hydrogen and hydrogen chloride,
• wherein, introducing the source gas into the reaction chamber and growing by CVD are alternately performed with suspension of the supply of the gas containing silicon and the gas containing carbon while maintaining the furnace temperature and performing processing in the gas atmosphere, from a start of growth of the single-crystal, silicon carbide epitaxial film until completion, and
• wherein, in introducing the source gas into the reaction chamber and performing the epitaxial growth, the single-crystal silicon carbide epitaxial film grown per session has a thickness of 2 μm or more and 4 μm or less.