Sn doped ZnS nanowires for white light source material

A method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source, comprising;

• coating a substrate, comprising a silicon oxide layer, with Sn by vacuuming depositing Sn as catalyst nanostructures on the substrate;
• placing the substrate coated with Sn in a furnace;
• introducing a carrier flow gas into the furnace;
• adding a ZnS powder to the furnace;
• growing ZnS nanostructures;
• and
• dissolving Sn in the growing ZnS nanostructures;
• wherein S vacancies are on a surface of the ZnS nanostructures, and
• wherein the ZnS nanostructures are grown on the substrate having a temperature in a range of 750° C. to 850° C.;
• wherein the ZnS nanostructures doped with Sn are grown on the substrate having a temperature of 780° C.;
• wherein the carrier flow qas is a mixture of hydrogen and nitrogen qas is in a ratio of 1:4 that is introduced at flow rate of 30 Sccm;
• and
• wherein a base pressure is during the Sn vacuum deposition is 1×10−7 torr and a working pressure during the Sn vacuum deposition is 3×10−6 torr.