Semiconductor device and method of manufacturing the same

A display driver semiconductor device comprising:

• a semiconductor substrate;
• a first MISFET including:
• (a) a first source region formed in the semiconductor substrate;
• (b) a first drain region formed in the semiconductor substrate;
• (c) a first gate insulation film formed on the semiconductor substrate and between the first source region and the first drain region in planar view;
• (d) a first gate electrode formed on the first gate insulation film,
• a second MISFET including:
• (e) a second source region formed in the semiconductor substrate;
• (f) a second drain region formed in the semiconductor substrate;
• (g) a second gate insulation film formed on the semiconductor substrate and between the second source region and the second drain region in planar view;
• (h) a second gate electrode formed on the second gate insulation film,
• a first interlayer insulation film formed on the first MISFET and the second MISFET;
• a first metal wiring layer formed on the first interlayer insulation film, including:
• (i) a first source wiring electrically connected with the first source region;
• (j) a first drain wiring electrically connected with the first drain region;
• (k) a second source wiring electrically connected with the second source region;
• (l) a second drain wiring electrically connected with the second drain region,
• wherein a length of the first gate electrode between the first source region and the first drain region is longer than a length of the second gate electrode between the second source region and the second drain region,
• wherein the first source wiring and the first drain wiring are spaced with the first gate electrode in planar view, and
• wherein the second source wiring and the second drain wiring are overlapped with the second gate electrode in planar view.