Pulsed plasma for film deposition

A method of depositing a material on a substrate disposed atop a substrate support pedestal in a process chamber, comprising:

• (a) depositing a layer of dielectric material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor;
• (b) treating all, or substantially all, of the deposited layer of dielectric material by breaking at least one chemical bond within the deposited layer of dielectric material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source;
• wherein the remote plasma source is pulsed for a first interval and the second plasma source is pulsed for a second interval concurrent with the first interval;
• and
• (c) repeating (a) and (b) until a predetermined thickness of the dielectric material is deposited and treated on the substrate, wherein a temperature of the substrate support pedestal during (a)-(c) is controlled from about −150 degrees Celsius to about 500 degrees Celsius.

A non-transitory computer readable medium having instructions stored thereon that, when executed, cause a method for processing a substrate disposed atop a substrate support pedestal in a processing chamber to be performed, the method comprising:

• (a) depositing a layer of dielectric material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor;
• (b) treating all, or substantially all, of the deposited layer of dielectric material by breaking at least one chemical bond within the deposited layer of dielectric material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source;
• wherein at least the remote plasma source is pulsed at least once to control periods of depositing;
• and
• (c) repeating (a) and (b) until a predetermined thickness of the dielectric material is deposited and treated on the substrate, wherein a temperature of the substrate support pedestal during (a)-(c) is controlled from about −150 degrees Celsius to about 500 degrees Celsius.