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US 10,096,465 B2Granted
Substrate processing method, substrate processing apparatus and recording medium
AssigneeTokyo Electron Limited
InventorKeisuke Yoshida
Life of this patent
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Abstract
A substrate processing method includes applying a solution of a compound containing a metal oxide to a surface of a wafer to form a liquid film of the solution on the surface of the wafer, heating the liquid film at a first temperature lower than a crosslinking temperature of the compound, and irradiating the liquid film with energy rays to form a coating film containing the metal oxide on the surface, after heating the liquid film at the first temperature.
Claims7
A substrate processing method, comprising:
- applying a solution of a compound containing a metal oxide to a surface of a wafer to form a liquid film of the solution on the surface of the wafer;
- heating the liquid film at a first temperature lower than a crosslinking temperature of the compound;
- and
- irradiating the liquid film with energy rays to form a coating film containing the metal oxide on the surface, after heating the liquid film at the first temperature,
- wherein, before the applying a solution, the method comprises,
- applying an initial solution of a compound to form an underlying liquid film on the surface, the underlying liquid film having a thickness less than that of the liquid film;
- and
- heating the underlying liquid film at a second temperature higher than a crosslinking temperature of the initial solution of the compound to form an underlying coating film on the surface, the underlying coating film having a thickness less than a thickness of the coating film, and
- wherein the initial solution of the compound and the solution of the compound are the same.
6 more elements
A substrate processing apparatus, comprising:
- a first processing part configured to apply a solution of a compound containing a metal oxide;
- a second processing part configured to perform a heat treatment at a first temperature;
- a third processing part configured to perform an irradiation of energy rays;
- a fourth processing part configured to perform a heat treatment at a second temperature;
- and
- a controller,
- wherein the controller is configured to perform:
- a control operation for controlling the first processing unit to apply the solution to a surface of a wafer so as to form a liquid film of the solution on the surface of the wafer,
- a control operation for controlling the second processing part to heat the liquid film at the first temperature lower than a crosslinking temperature of the compound, and
- a control operation for controlling the third processing part to irradiate the liquid film with the energy rays so as to form a coating film containing the metal oxide on the surface of the wafer, after heating the liquid film at the first temperature,
- wherein, before the control operation for controlling the first processing unit, the controller is configured to perform:
- a pre-control operation for controlling the first processing part to apply an initial solution of a compound to form an underlying liquid film on the surface, the underlying liquid film having a thickness less than that of the liquid film;
- and
- a pre-control operation for controlling the fourth processing part to heat the underlying liquid film at the second temperature higher than a crosslinking temperature of the initial solution of the compound to form an underlying coating film on the surface, the underlying coating film having a thickness less than a thickness of the coating film, and
- wherein the initial solution of the compound and the solution of the compound are the same.
12 more elements
Dependencies are inferred from the claim text.