Method, system and device for non-volatile memory device operation

A device comprising:

• a voltage supply to generate a read supply voltage;
• a first correlated electron switch (CES) element comprising correlated electron material;
• a first conducting element to connect a bitline to a terminal of the first CES element in response to a first wordline voltage signal during a read operation and a write operation, the first conducting element to permit a first current between the bitline and the terminal of the first CES element during the read operation and to permit a second current between the bitline and the terminal of the first CES element during the write operation, wherein a magnitude of the second current is greater than a magnitude of the first current;
• and
• a second conducting element to connect the first CES element between the voltage supply and a reference node during the read operation and to isolate the first CES element from the voltage supply or the reference node in the write operation,
• wherein the first conducting element permits a magnitude of the second current during the write operation to provide a magnitude of a current density in the correlated electron material sufficient to provide a concentration of electron holes in at least a portion of the correlated electron material for a change in an impedance state of the first CES element from a low impedance or conductive state to a high impedance or insulative state.