Spin hall effect MRAM with self-reference read
AssigneeInternational Business Machines Corporation
InventorDaniel C. Worledge
Life of this patent
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Abstract
Techniques for writing magnetic random access memory (MRAM) using the spin hall effect with a self-reference read are provided. In one aspect, an MRAM device is provided. The MRAM device includes: a plurality of first spin hall wires oriented orthogonal to a plurality of second spin hall wires; a plurality of magnetic memory cells configured in an array between the first spin hall wires and the second spin hall wires; and a plurality of transistors connected to the magnetic memory cells by the first spin hall wires. Methods of operating an MRAM device are also provided.
Claims19
A magnetic random access memory (MRAM) device, comprising:
- a plurality of first spin hall wires oriented orthogonal to a plurality of second spin hall wires;
- a plurality of magnetic memory cells configured in an array between the first spin hall wires and the second spin hall wires;
- a plurality of transistors connected to the magnetic memory cells by the first spin hall wires;
- a plurality of drain lines;
- and
- a plurality of gate lines oriented orthogonal to the drain lines.
Dependencies are inferred from the claim text.