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US 10,096,335 B2Granted
Thermal retention structure for a data device
AssigneeSeagate Technology LLC
InventorYukiko Kubota
Life of this patent
Estimating the term…
Abstract
A data device may have at least a magnetic lamination with a thermal retention structure deposited on a substrate and configured to maintain a predetermined temperature for a predetermined amount of time. Such predetermined temperature and amount of time may allow for the growth of a magnetic layer with a predetermined magnetic anisotropy.
Claims20
A method comprising:
- depositing a thermal retention structure on a substrate, the thermal retention structure comprising a continuous magnetic film, the substrate comprising glass, glass ceramic composite, Si, AlMg, or NiP;
- heating the thermal retention structure to a temperature range of 400-800° C.;
- and
- forming a magnetic layer on the thermal retention structure while the thermal retention structure is maintained within the temperature range for between 3 picoseconds to 60 seconds without external application of heat.
1 more element
A method comprising:
- depositing a thermal retention structure on a substrate, the thermal retention structure comprising a single continuous magnetic film, the substrate comprising glass, glass ceramic composite, Si, AlMg, or NiP;
- depositing a protective layer atop the thermal retention structure, the protective layer comprising a material having a thermal conductivity conducive to heat assisted magnetic recording;
- heating the thermal retention structure to a temperature range of 400-800° C.;
- and
- forming a magnetic layer on the protective layer while the thermal retention structure is maintained within the temperature range for between 3 picoseconds to 60seconds without external application of heat.
2 more elements
A method comprising:
- depositing a thermal retention structure on a substrate, the thermal retention structure comprising a Cu or Mo material;
- heating the thermal retention structure to a temperature range of 400-800° C.;
- and
- forming a magnetic layer on the thermal retention structure while the thermal retention structure is maintained within the temperature range for between 10-60 seconds without external application of heat.
1 more element
Dependencies are inferred from the claim text.