Hybrid MEMs-floating gate device

An integrated circuit (IC) including a metallization layer formed over a semiconductor substrate, the IC including at least one hybrid Micro-Electro-Mechanical-System-Floating-Gate (MEMS-FG) device comprising:

• a memory cell including a first source region and a first drain region formed in the semiconductor substrate, and a first gate structure formed between the semiconductor substrate and the metallization layer and disposed over a first channel region separating the first source region and the first drain region;
• a MEMS switch disposed on the metallization layer and including a movable electrode and at least one fixed electrode, the MEMS switch being configured such that said movable electrode is disposed away from the fixed electrode in the absence of an actuating force, and such that the movable electrode abuts the fixed electrode when the MEMS switch is subjected to said actuating force;
• and
• a metal structure fixedly connected between the gate structure and the fixed electrode, said metal structure extending through the metallization layer,
• wherein the gate structure, the metal structure and the fixed electrode collectively form an electrically isolated structure.