Method of manufacturing a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Wen Chang, Hui Yu Lee, Ya Yun Liu, Jui-Feng Kuan, Yi-Kan Cheng
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Abstract
A method of making a semiconductor device includes determining a temperature profile for a first die of a three-dimensional integrated circuit (3DIC). The method further includes identifying a plurality of sub-regions of the first die based on the determined temperature profile. The method further includes simulating operation of a circuit in a second die of the 3DIC based on the determined temperature profile and a corresponding sub-region of the plurality of sub-regions. The method further includes manufacturing the semiconductor device.
Claims20
A method of making a semiconductor device, the method comprising:
- determining a temperature profile for a first die of a three-dimensional integrated circuit (3DIC);
- identifying a plurality of sub-regions of the first die based on the determined temperature profile;
- simulating operation of a circuit in a second die of the 3DIC based on the determined temperature profile and a corresponding sub-region of the plurality of sub-regions;
- and
- manufacturing the semiconductor device.
A method of making a semiconductor device, the method comprising:
- determining a temperature of at least one area of a first die of a three-dimensional integrated circuit (3DIC);
- simulating operation of a circuit in a second die of the 3DIC based on a temperature determined using Formula (1):
- Temp=(Ratio1*T1)+(Ratio2*T2) (1)
- where Temp is the determined temperature, Ratio1 is a first predetermined ratio, T1 is an ambient temperature, Ratio2 is a second predetermined ratio, and T2 is the temperature of the at least one area of the first die;
- and
- manufacturing the semiconductor device.
A method of making a semiconductor device, the method comprising:
- determining a temperature of a first die of a three-dimensional integrated circuit (3DIC);
- determining a temperature of a second die of the 3DIC;
- simulating operation of a circuit in third die of the 3DIC based on at least one of the determined temperature of the first die or the determined temperature of the second die;
- and
- manufacturing the semiconductor device.
Dependencies are inferred from the claim text.