Random telegraph noise native device for true random number generator and noise injection
AssigneeInternational Business Machines Corporation
InventorsChia-yu Chen, Damon Farmer, Suyog Gupta, Shu-jen Han
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Abstract
A method (and system) for generating random numbers includes setting a drain voltage Vd on an MOSFET device to maximize a transconductance of the MOSFET device and setting a gate voltage Vg of the MOSFET device to tune as desired a random number statistical distribution of an output of the MOSFET device. The MOSFET device includes a gate structure with an oxide layer including at least one artificial trapping layer in which carrier traps are designed to occupy a predetermined distance from conduction and valance bands of material of the artificial trapping layer.
Claims8
A semiconductor device, comprising:
- a substrate;
- a metal oxide semiconductor (MOS) device comprising:
- a source region and a drain region embedded in said substrate;
- and
- a gate structure formed between said source and drain regions, said gate structure comprising an oxide layer comprising at least one artificial trapping layer in which carrier traps are designed to occupy a predetermined distance from conduction and valance bands of material of said artificial trapping layer;
- an operational amplifier formed on said substrate;
- and
- a resistance R interconnected between a first input terminal and an output terminal of said operational amplifier, such that said operational amplifier and resistor thereby forms a low noise amplifier for said MOS device,
- wherein an amount of a gate current Ig of said MOS device passes through said resistance R, so that an output voltage of said low noise amplifier V=Ig*R, and wherein a voltage at a second input terminal of said operational amplifier sets a voltage Vg for said gate of said MOS structure, and
- wherein a voltage at said drain of said MOS is set at a voltage value predetermined to maximize a transconductance gm of said MOS device and wherein Vg is selectively set to tune a random number statistical distribution of voltage values of said output voltage of said operational amplifier.
A semiconductor device, comprising:
- a substrate;
- a metal oxide semiconductor (MOS) device comprising:
- a source region and a drain region embedded in said substrate;
- and
- a gate structure formed between said source and drain regions, said gate structure comprising an oxide layer comprising at least one artificial trapping layer in which carrier traps are designed to occupy a predetermined distance from conduction and valance bands of material of said artificial trapping layer;
- an operational amplifier formed on said substrate;
- and
- a resistance R interconnected between a first input terminal and an output terminal of said operational amplifier, such that said operational amplifier and resistor thereby forms a low noise amplifier for said MOS device,
- wherein an amount of a drain current Id of said MOS device passes through said resistance R, so that an output voltage of said low noise amplifier V=Id*R, and wherein a voltage at a second input terminal of said operational amplifier sets a voltage Vd for said drain of said MOS structure, and
- wherein said voltage Vd at said drain of said MOS is set at a voltage value predetermined to maximize a transconductance gm of said MOS device and wherein Vg is selectively set to tune a random number statistical distribution of voltage values of said output voltage of said operational amplifier.
A method of generating random numbers, said method comprising:
- setting a drain voltage Vd on an MOSFET (metal oxide semiconductor field effect transistor) device to maximize a transconductance of said MOSFET device;
- and
- setting a gate voltage Vg of said MOSFET device to tune as desired a random number statistical distribution of an output of said MOSFET device,
- wherein said MOSFET device comprises a gate structure comprising an oxide layer including at least one artificial trapping layer in which carrier traps are designed to occupy a predetermined distance from conduction and valance bands of material of said artificial trapping layer.
Dependencies are inferred from the claim text.