Cache memory device and data processing method of the device
AssigneeSamsung Electronics Co., Ltd.
InventorsKwang Seok Im, Hye Young Kim
Life of this patent
Estimating the term…
Abstract
A cache memory device is provided. The cache memory device includes a memory including a first cache memory region and a second cache memory region, and a control block. The control block determines a type of data to be received. The control block also performs at least one of transmitting a head of received data to a first cache memory region, transmitting a body of the received data to a second cache memory region and transmitting a tail of the received data to the first cache memory region based on the type of the data to be received.
Claims19
A method of operating a data storage device including a temporary memory having first and second storage regions, and a plurality of nonvolatile memory devices and a plurality of channels, the method comprising:
- receiving a write command, a logical block address (LBA) and a sector count value from an external device;
- receiving data corresponding to the write command from the external device;
- determining a first portion and a second portion of the data based on the LBA, the sector count value, and a super page size of the data storage device, wherein the superpage size is the number of the plurality of channels multiplied by a number of sectors located within a page buffer of the data storage device;
- storing the data in the temporary memory including storing the first portion of the data in the first storage region and storing the second portion of the data in the second storage region;
- and
- transferring the first portion of the data from the first storage region of the temporary memory to at least two of the nonvolatile memory devices through a first number of the plurality of channels,
- wherein the storing of the first portion and the second portion is performed before the transferring of the first portion and a transferring of the second portion.
A data storage device including a temporary memory having first and second storage regions, and having a plurality of channels, the data storage device comprising:
- a controller block configured to receive a write command, a logical block address (LBA) and a sector count value, and configured to receive data corresponding to the write command;
- a memory configured to store the data;
- and
- a plurality of nonvolatile memory devices, each of the plurality of nonvolatile memory devices including a multi-level cell (MLC),
- wherein the controller block is further configured to:
- determine a first portion and a second portion of the data based on the LBA, the sector count value, and a super page size of the data storage device, wherein the superpage size is the number of the plurality of channels multiplied by a number of sectors located within a page buffer of the data storage device;
- store the data in the temporary memory including storing the first portion of the data in the first storage region and storing the second portion of the data in the second storage region;
- and
- transfer the first portion of the data from the first storage region of the temporary memory to at least two of the nonvolatile memory devices through a first number of the plurality of channels, and
- wherein the plurality of nonvolatile memory devices are coupled to the memory through the plurality of channels,
- wherein the storing of the first portion and the second portion is performed before the transferring of the first portion and a transferring of the second portion.
A method of operating a data storage device including a temporary memory having first and second storage regions, a plurality of channels, and a plurality of nonvolatile memory devices, the method comprising:
- receiving a write command, a logical block address (LBA) and a sector count value from an external device;
- receiving data corresponding to the write command from the external device;
- determining a first portion and a second portion of the data based on the LBA, the sector count value, and a super page size of the data storage device,
- wherein the superpage size is the number of the plurality of channels multiplied by a number of sectors located within a page buffer of the data storage device;
- storing the data in the temporary memory including storing the first portion of the data in the first storage region and storing the second portion of the data in the second storage region;
- and
- transferring the second portion of the data from the second storage region of the temporary memory to at least one of the nonvolatile memory devices through a first number of the plurality of channels,
- wherein the storing of the first portion and the second portion is performed before a transferring of the first portion and the transferring of the second portion.
Dependencies are inferred from the claim text.