Apparatus and method for programming non-volatile memory using a multi-cell storage cell group

A system, comprising:

• a processor;
• a bus, wherein the processor is coupled to the bus;
• and
• a non-volatile memory having:
• data in storage cells accessed by the processor over the bus, wherein each storage cell is programmed with information using a plurality of threshold voltage levels, and wherein each storage cell is programmed from bits from a plurality of pages;
• and
• a memory controller configured to program the storage cells and to:
• organize the storage cells in the non-volatile memory into storage cell groups, wherein each storage cell group stores a number of bits of information, wherein each of the storage cells in each of the storage cell groups is programmed with the plurality of threshold voltage levels;
• select bits from the pages to write for one storage cell group;
• and
• determine at least one threshold voltage level to use for each of the storage cells in the storage cell group to program the selected bits in the storage cell group.

A method for managing a non-volatile memory, comprising:

• programming storage cells in the non-volatile memory with information using a plurality of threshold voltage levels, and wherein each storage cell is programmed from bits from a plurality of pages;
• organizing the storage cells in the non-volatile memory into storage cell groups, wherein each storage cell group stores a number of bits of information, wherein each of the storage cells in each of the storage cell groups is programmed with the plurality of threshold voltage levels;
• selecting bits from the pages to write for one storage cell group;
• and
• determining at least one threshold voltage level to use for each of the storage cells in the storage cell group to program the selected bits in the storage cell group.