Photoresist and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Han Lai, Ching-Yu Chang
Life of this patent
Estimating the term…
Abstract
Shrinkage and mass losses are reduced in photoresist exposure and post exposure baking by utilizing a small group which will decompose. Alternatively a bulky group which will not decompose or a combination of the small group which will decompose along with the bulky group which will not decompose can be utilized. Additionally, polar functional groups may be utilized in order to reduce the diffusion of reactants through the photoresist.
Claims20
A photoresist comprising a polymer, wherein the polymer comprises:
- a first group which will decompose by action of acids, bases, or free radicals generated by a photoactive compound, the first group which will decompose having a first number of carbon atoms;
- a second group which will decompose by the action of the acids, the bases, or the free radicals generated by the photoactive compound, the second group which will decompose having a second number of carbon atoms smaller than the first number of carbon atoms and smaller than nine carbon atoms, wherein the photoresist is a negative tone photoresist and wherein the first group which will decompose has a loading of greater than about 30%, wherein the first group which will decompose and the second group which will decompose are part of a single polymer, and wherein the second group which will decompose comprises a cycloalkyl group and further comprises a C4-C5 alkyl group, an acetyl group, or an acetyl alkyl group;
- and
- a first bulky group which will not decompose by the action of the acids, the bases, or the free radicals generated by the photoactive compound, wherein the second group which will decompose is bonded to the first bulky group which will not decompose.
A photoresist comprising:
- a solvent;
- a photoactive compound;
- and
- a polymer resin, wherein the photoresist is a negative tone photoresist and wherein the polymer resin comprises:
- a first group which will cleavage by action of acids, bases, or free radicals generated by a photoactive compound, wherein the first group which will cleavage has greater than 9 carbon atoms, wherein the first group which will cleavage has a loading of greater than about 45%;
- and
- a second group which will cleavage by action of the acids, the bases, or the free radicals generated by the photoactive compound, wherein the second group which will cleavage has no more than nine carbon atoms, and wherein the second group which will cleavage comprises both a cycloalkyl group and an acetyl group or an acetyl alkyl group.
A photoresist comprising a polymer, wherein the polymer comprises:
- a hydrocarbon backbone;
- a bulky group which will decompose by action of acids, bases, or free radicals generated by a photoactive compound, wherein the bulky group which will decompose is bonded to the hydrocarbon backbone, wherein the bulky group which will decompose has greater than nine carbon atoms and has a loading of greater than about 45%;
- a small group which will decompose by action of the acids, the bases, or the free radicals generated by the photoactive compound, wherein the small group which will decompose is bonded to the hydrocarbon backbone, wherein the small group which will decompose has less than nine carbon atoms and has a loading of greater than about 5%, and wherein the small group which will decompose comprises a cycloalkyl group and a C4-C5 alkyl group;
- and
- a lactone group bonded to the hydrocarbon backbone, wherein the photoresist is a negative tone photoresist.
Dependencies are inferred from the claim text.