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US 10,095,076 B2Granted
Semiconductor device having a backlight and light-receiving element
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYoshiyuki Kurokawa, Takayuki Ikeda
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Abstract
A semiconductor device includes a photodiode, a first transistor, and a second transistor. The photodiode has a function of supplying a charge corresponding to incident light to a gate of the first transistor, the first transistor has a function of accumulating the charge supplied to the gate, and the second transistor has a function of retaining the charge accumulated in the gate of the first transistor. The second transistor includes an oxide semiconductor.
Claims16
A semiconductor device comprising:
- a substrate;
- a backlight;
- a light-receiving element;
- a first transistor;
- and
- a second transistor,
- wherein the light-receiving element is electrically connected to a gate of the first transistor through the second transistor,
- wherein each of the first transistor and the second transistor comprises a crystalline oxide semiconductor in a channel formation region,
- wherein the crystalline oxide semiconductor comprises indium, gallium and zinc,
- wherein an off-state current of the second transistor per micrometer of a channel width is 10 aA/μm or less,
- wherein the light-receiving element is provided over the substrate,
- wherein the backlight is provided under the substrate, and
- wherein the light-receiving element is configured to receive a light emitted from the backlight.
10 more elements
A semiconductor device comprising:
- a substrate;
- a backlight;
- a light-receiving element;
- a first transistor;
- a second transistor;
- and
- a third transistor,
- wherein the light-receiving element is electrically connected to a gate of the first transistor through the second transistor,
- wherein one of a source and a drain of the third transistor is electrically connected to the gate of the first transistor,
- wherein each of the first transistor, the second transistor and the third transistor comprises a crystalline oxide semiconductor in a channel formation region,
- wherein the crystalline oxide semiconductor comprises indium, gallium and zinc,
- wherein an off-state current of the second transistor per micrometer of a channel width is 10 aA/μm or less,
- wherein the light-receiving element is provided over the substrate,
- wherein the backlight is provided under the substrate, and
- wherein the light-receiving element is configured to receive a light emitted from the backlight.
12 more elements
A semiconductor device comprising:
- a substrate;
- a backlight;
- a light-receiving element;
- a first transistor;
- an insulating layer over the light-receiving element and the first transistor;
- and
- a second transistor over the insulating layer,
- wherein the light-receiving element is electrically connected to the second transistor through an electrode,
- wherein the electrode is provided in an opening of the insulating layer,
- wherein the second transistor comprises a crystalline oxide semiconductor in a channel formation region,
- wherein the crystalline oxide semiconductor comprises indium, gallium and zinc,
- wherein an off-state current of the second transistor per micrometer of a channel width is 10 aA/μm or less,
- wherein the light-receiving element is provided over the substrate,
- wherein the backlight is provided under the substrate, and
- wherein the light-receiving element is configured to receive a light emitted from the backlight.
12 more elements
Dependencies are inferred from the claim text.