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US 10,094,988 B2Granted
Method of forming photonics structures
AssigneeMicron Technology, Inc.
InventorGurtej Sandhu
Life of this patent
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Abstract
The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.
Claims15
A method for fabricating an integrated structure, the method comprising:
- fabricating a CMOS structure containing an electronic device over a substrate, wherein the electronic device is formed using a first semiconductor material;
- fabricating a second semiconductor material over the first semiconductor material;
- fabricating a buried oxide material between the first semiconductor material and the second semiconductor material,
- fabricating a photonic device using the second semiconductor material, the photonic device comprising a modulator having associated doped regions and a photodetector;
- and
- activating the doped regions with microwave energy such that the doped regions are heated to a temperature in the range of about 200 to about 500 degrees Celsius,
- wherein the buried oxide material is configured to function as a cladding for the photonic device.
4 more elements
Dependencies are inferred from the claim text.