Amplified dual-gate bio field effect transistor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Shao Liu, Rashid Bashir, Fei-Lung Lai, Chun-wen Cheng
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Shao Liu, Rashid Bashir, Fei-Lung Lai, Chun-wen Cheng
Estimating the term…
The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity. An amplification factor of the BioFET device may be provided by a difference in capacitances associated with the gate structure on the first surface and with the interface layer formed on the second surface.
A method of fabricating a semiconductor device, the method comprising:
A method of fabricating a semiconductor device, the method comprising:
A method of using a BioFET sensor to detect target molecules, the method comprising:
Dependencies are inferred from the claim text.